october 2012 FDP032N08B_f102 channel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDP032N08B_f102 rev.c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* * package limitation current is 120a. thermal characteristics symbol parameter FDP032N08B_f102 units v dss drain to source voltage 80 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 211* a - continuous (t c = 100 o c, silicon limited) 149* - continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 844 a e as single pulsed avalanche energy (note 2) 649 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 263 w - derate above 25 o c1.75w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP032N08B_f102 units r jc thermal resistance, junction to case, max 0.57 o c/w r ja thermal resistance, junction to ambient, max 62.5 FDP032N08B_f102 n-channel powertrench ? mosfet 80v, 211a, 3.3m features ?r ds(on) = 2.85m (typ.)@ v gs = 10v, i d = 50a ?low fom r ds(on) *q g ? low reverse recovery charge, q rr ? soft reverse recovery body diode ? enables highly efficiency in synchronous rectification ? fast switching speed ? 100% uil tested ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advanced powert rench? process that has been especially tailored to mini mize the on-state resistance and yet maintain superior switching performance. application ? synchronous rectification for atx / server / telecom psu ? battery charger and battery protection circuit ? dc motor drives and uninterruptible power supplies ? micro solar inverter g s d to-220 g d s
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev.c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package description quantity FDP032N08B FDP032N08B_f102 to-220 f102: trimmed leads 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 80 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.04 - v/ o c i dss zero gate voltage drain current v ds = 64v, v gs = 0v - - 1 a v ds = 64v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-4.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 100a - 2.85 3.3 m g fs forward transconductance v ds = 10v, i d = 100a - 168 - s c iss input capacitance v ds = 40v, v gs = 0v f = 1mhz - 8245 10965 pf c oss output capacitance - 1250 1660 pf c rss reverse transfer capacitance - 28 - pf c oss(er) energy related output capacitance v ds = 40v, v gs = 0v - 2337 - pf q g(tot) total gate charge at 10v v ds = 40v, i d = 100a v gs = 10v (note 4) - 111 144 nc q gs gate to source gate charge - 44 - nc q gd gate to drain ?miller? charge - 23 - nc v plateau gate plateau volatge - 5.6 - v q sync total gate charge sync. v ds = 0v, i d = 50a (note 5) - 98.2 - nc q oss output charge v ds = 40v, v gs = 0v - 114 - nc t d(on) turn-on delay time v dd = 40v, i d = 100a v gs = 10v, r gen = 4.7 (note 4) -3886ns t r turn-on rise time - 44 97 ns t d(off) turn-off delay time - 71 152 ns t f turn-off fall time - 31 72 ns esr equivalent series resistance (g-s) f = 1mhz - 2.3 - i s maximum continuous drain to source diode forward current - - 211* a i sm maximum pulsed drain to source diode forward current - - 844 a v sd drain to source diode forward voltage v gs = 0v, i sd = 100a - - 1.3 v t rr reverse recovery time v gs = 0v, v dd =40v, i sd = 100a di f /dt = 100a/ s -75-ns q rr reverse recovery charge - 102 - nc notes: 1. repetitive rating: pulse width li mited by maximum junction temperature 2. l = 3mh, i as = 20.8a, starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics 5. see the test circuit in page 8
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev.c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 100 400 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 234567 1 10 100 400 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 90 180 270 360 450 2.0 2.5 3.0 3.5 4.0 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0.3 0.6 0.9 1.2 1.5 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 80 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 20406080100120 0 2 4 6 8 10 *note: i d = 100a v ds = 16v v ds = 40v v ds = 64v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev.c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 *notes: 1. v gs = 10v 2. i d = 100a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 175 0 40 80 120 160 200 240 r jc = 0.57 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c] 110100 0.01 0.1 1 10 100 1000 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 0.57 o c/w dc 0 153045607590 0 1 2 3 4 5 e oss , [ j] v ds , drain to source voltage [v] 0.001 0.01 0.1 1 10 100 500 1 10 100 t j = 25 o c t j = 150 o c t av , time in avalanche (ms) i as , avalanche current (a)
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev.c0 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.57 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev.c0 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms g s d g s d
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev.c0 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev. c0 www.fairchildsemi.com 8 total gate charge qsync. test circuit & waveforms
FDP032N08B_f102 n-channel powertrench ? mosfet FDP032N08B_f102 rev.c0 www.fairchildsemi.com 9 mechanical dimensions to-220 (f102: trimmed leads)
FDP032N08B_f102 n-ch annel powertrench ? mosfet FDP032N08B_f102 rev. c0 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devic es or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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